Team Group MP34 M.2 2280 4TB PCIe 3.0 x4 with NVMe 1.3 3D NAND Internal Solid State Drive (SSD) TM8FP4004T0C101

Team Group MP34 M.2 2280 4TB PCIe 3.0 x4 with NVMe 1.3 3D NAND Internal Solid State Drive (SSD) TM8FP4004T0C101
The MP34 high speed solid state drive from TEAMGROUP is built with premium quality 3D flash memory, and supports the new generation of PCIe Gen3 x4 high speed interface and the latest NVMe 1.3 protocol. The superior performance reaches sequential read/write speed up to 3000/2600 MB/s, ensuring ultra-fast system bootup/shutdown and instant application launching. Its M.2 2280 form factor fits in the latest desktops and laptops where space is at premium. Plus, an array of advanced technologies such as TRIM, Wear-leveling and ECC (Error Correction Code) is built in, allowing you to enjoy stable, reliable and consistently fast performance throughout the usage of the SSDs. In an era when speed matters, shifting to employ PCIe interface has become a trend for M.2 solid state drive. The MP34 M.2 PCIe SSD uses PCIe Gen3 x4 high speed transfer interface. With support for PCIe bus bandwidth, it can offer a transfer speed of at least 2000 MB/s, or up to over 3000 MB/s, which is 5 times higher than SATA III interface and allows you to hop aboard the high speed train that goes straight to the core of performance. MP34 M.2 PCIe SSD supports the latest NVMe 1.3 protocol. The system communicates with it through PCIe bus and connects to the built-in PCIe controller of the chipset or processor, so the signal transfer is as simple, precise as point to point, that offers you a pleasant high-performance transfer experience, without a bit of lag or delay. The MP34 M.2 PCIe SSD supports S.M.A.R.T. function and its built-in smart algorithm management mechanism has functions that are able to ensure operation efficiency, prolong the service life of the SSD and bring it to its maximum performance. Meanwhile, the powerful Wear-Leveling technology and ECC (Error Correction Code) function improve the accuracy of data transfer and prolong the service life of flash memory.